Shenzhen Koben Electronics Co., Ltd.
Shenzhen Koben Electronics Co., Ltd.
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RA30H1317M Power Mosfet Transistor for Mobile Radio use 135-175MHz 30W 12.5V
DESCRIPTION
The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
1, Enhancement-Mode MOSFET Transistors (IDD@0 @ VDD=12.5V, VGG=0V) • Pout>30W, hT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
2, Broadband Frequency Range: 135-175MHz
3, Low-Power Control Current IGG=1mA (typ) at VGG=5V
4, Module Size: 66 x 21 x 9.88 mm
5, Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
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