Shenzhen Koben Electronics Co., Ltd.

Shenzhen Koben Electronics Co., Ltd.

Manufacturer from China
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

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Shenzhen Koben Electronics Co., Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrZhu
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

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Brand Name :Mitsubishi
Model Number :RD06HVF1
Certification :CE
Place of Origin :CN
MOQ :50 pieces
Price :negotiable
Payment Terms :T/T, Western Union, Paypal
Supply Ability :10Kpcs per year
Delivery Time :1-2 working days
Packaging Details :plastic tube
Goods Condition :Brand New
Part Status :Active
Lead Free / Rohs :Complaint
Function :amp
Mounting Type :throught hole
Package :TO220
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View Product Description

RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications

Description of RD06HVF1

RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications

FEATURES of RD06HVF1

High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

APPLICATION of RD06HVF1

For output stage of high power amplifiers in VHF band mobile radio sets.

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