Shenzhen Koben Electronics Co., Ltd.
Shenzhen Koben Electronics Co., Ltd.
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FGL60N100BNTD IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction
and switching characteristics as well as enhanced
avalanche ruggedness. These devices are well suited for
Induction Heating ( I-H ) applications
| IGBT Type | NPT and Trench | |
| Voltage - Collector Emitter Breakdown (Max) | 1000V | |
| Current - Collector (Ic) (Max) | 60A | |
| Current - Collector Pulsed (Icm) | 120A | |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A | |
| Power - Max | 180W | |
| Switching Energy | - | |
| Input Type | Standard | |
| Gate Charge | 275nC | |
| Td (on/off) @ 25°C | 140ns/630ns | |
| Test Condition | 600V, 60A, 51 Ohm, 15V | |
| Reverse Recovery Time (trr) | 1.2µs | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole |
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